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| Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit: mm s Features q q q 15.00.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 60 80 60 80 6 5 3 25 2 150 -55 to +150 Unit 9.90.3 3.00.5 4.60.2 2.90.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2374 2SD2374A 2SD2374 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 2.60.1 V 0.550.15 emitter voltage 2SD2374A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 1 2 2.540.3 3 5.080.5 V A A W C C 1:Base 2:Collector 3:Emitter TO-220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V min typ max 200 200 300 300 1 Unit A A mA V 2SD2374 2SD2374A 2SD2374 2SD2374A 60 70 10 1.8 1.2 30 0.5 2.5 0.4 250 V V MHz s s s Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC -- Ta 40 6 (1) TC=Ta (2) Without heat sink (PC=2W) TC=25C 2SD2374, 2SD2374A IC -- VCE 8 7 5 VCE=4V TC=25C IC -- VBE Collector power dissipation PC (W) 36 32 28 (1) 24 20 16 12 8 4 0 0 20 40 60 (2) Collector current IC (A) 60mA 4 Collector current IC (A) 12 3 IB=100mA 90mA 80mA 70mA 50mA 40mA 30mA 20mA 6 5 4 3 2 1 2 10mA 1 0 80 100 120 140 160 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 IC/IB=8 TC=25C 10000 hFE -- IC 1000 VCE=4V TC=25C 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 80 x 2mm Al heat sink Ta=25C Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 10 ICP 3 1 0.3 0.1 0.03 0.01 1 3 10 30 t=1ms IC 1s 10ms (1) (2) 10 1 2SD2374A 2SD2374 10-1 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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